NSVMMUN2113LT3G
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSVMMUN2113LT3G is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This device features integrated base resistors, simplifying circuit design and reducing component count. Key specifications include a Collector-Emitter Breakdown Voltage (Vce) of 50V, a maximum Collector Current (Ic) of 100mA, and a power dissipation of 246mW. The DC Current Gain (hFE) is a minimum of 80 at 5mA/10V. The transistor type is PNP, pre-biased, with built-in resistors of 47 kOhms (R1) and 47 kOhms (R2). Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA/10mA. This component is AEC-Q101 qualified, indicating suitability for automotive applications. The package is a standard SOT-23-3 (TO-236-3, SC-59), supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | AEC-Q101 |
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