NSBC144EF3T5G
TRANS PREBIAS NPN 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSBC144EF3T5G is an NPN pre-biased bipolar transistor designed for efficient switching and signal amplification. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistor (R1) of 47 kOhms and emitter resistor (R2) of 47 kOhms simplify circuit design by eliminating the need for external biasing components. With a power dissipation rating of 254mW and a minimum DC current gain (hFE) of 80 at 5mA/10V, the NSBC144EF3T5G is suitable for applications requiring low power consumption and moderate current handling. The transistor exhibits a Vce saturation of 250mV at 300µA/10mA and a collector cutoff current of 500nA. Packaged in a compact SOT-1123 surface-mount format, this component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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