NSBC143EF3T5G
TRANS PREBIAS NPN 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSBC143EF3T5G is an NPN pre-biased bipolar transistor in a SOT-1123 package. This device features internal base-resistor networks for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 254mW. The transistor exhibits a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V Vce. Saturation voltage is typically 250mV at 1mA base current and 10mA collector current. The integrated base resistors are specified as 4.7 kOhms for both R1 and R2. This component is commonly utilized in consumer electronics, industrial automation, and portable devices requiring simple switching or amplification functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | - |