NSBC115TF3T5G
TRANS PREBIAS NPN 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NPN Pre-Biased Transistor, NSBC115TF3T5G. This bipolar transistor features an integrated base resistor (R1) of 100 kOhms, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation of 254mW, this device is packaged in a compact SOT-1123 surface mount configuration. The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V Vce. The transistor exhibits a Vce(sat) of 250mV at 5mA base current and 10mA collector current. Typical applications include logic level shifting, digital switching, and amplification, often found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 100 kOhms |
| Qualification | - |
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