NSBC114TF3T5G
TRANS PREBIAS NPN 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSBC114TF3T5G is an NPN pre-biased bipolar transistor housed in a SOT-1123 surface mount package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring an integrated base resistor of 10 kOhms, it simplifies circuit design by eliminating the need for external biasing. The device exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 254 mW, it is suitable for applications requiring reduced component count and simplified assembly. This transistor finds utility in various consumer electronics and industrial control systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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