NSBC113EF3T5G
TRANS PREBIAS NPN 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSBC113EF3T5G is an NPN pre-biased bipolar transistor packaged in a SOT-1123 surface mount configuration. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 254mW. It includes integrated base resistors (R1 and R2) of 1 kOhm each, enabling simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 3 at 5mA collector current and 10V collector-emitter voltage. It is supplied on tape and reel. This device finds application in areas such as digital logic, switching circuits, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Qualification | - |
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