NSBA143ZF3T5G
TRANS PREBIAS PNP 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSBA143ZF3T5G is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistor (R1) is 4.7 kOhms, and the emitter-base resistor (R2) is 47 kOhms, providing a typical DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. It offers a maximum power dissipation of 254 mW and comes in a SOT-1123 package. The NSBA143ZF3T5G is suitable for use in industrial and consumer electronics, particularly in applications requiring simplified circuit design and reduced component count, such as switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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