NSBA123JF3T5G
TRANS PREBIAS PNP 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSBA123JF3T5G is a PNP pre-biased bipolar junction transistor designed for surface mount applications within the SOT-1123 package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 at 2.2 kOhms and R2 at 47 kOhms, simplify circuit design by eliminating the need for external biasing. With a maximum power dissipation of 254 mW, it offers a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce) is specified at a maximum of 250 mV at 300 µA base current and 10 mA collector current. This device is suitable for general-purpose switching and amplification in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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