NSBA114EF3T5G
TRANS PREBIAS PNP 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi NSBA114EF3T5G is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms) for simplified circuit design, enabling direct connection to logic outputs. With a maximum power dissipation of 254 mW and a Vce saturation of 250mV at 300µA/10mA, it is suitable for various digital logic applications, including switching and signal amplification. The SOT-1123 package, supplied on tape and reel, is ideal for high-density board layouts in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | - |
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