NSBA113EF3T5G
TRANS PREBIAS PNP 50V SOT1123Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
onsemi NSBA113EF3T5G is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 and R2, are both specified at 1 kOhms, simplifying circuit design. With a maximum power dissipation of 254 mW, it is packaged in a compact SOT-1123 format and supplied on tape and reel. The device exhibits a minimum DC current gain (hFE) of 3 at 5 mA and 10 V, and a Vce saturation of 250 mV at 5 mA base current and 10 mA collector current. Applications include digital logic, switching, and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Supplier Device Package | SOT-1123 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 254 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Qualification | - |
Request a Quote
Clients Also Buy
MMUN2111LT1
TRANS BRT PNP 100MA 50V SOT23
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MUN5234T1
TRANS PREBIAS NPN 50V SC70-3
