NSB9435T1G
TRANS PREBIAS PNP 30V 3A SOT223Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi NSB9435T1G is a PNP, pre-biased bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 3A. It offers a minimum DC current gain (hFE) of 125 at 800mA and 1V, with a transition frequency of 110 MHz. The transistor has a maximum power dissipation of 720 mW and a base resistor (R1) of 10 kOhms. The saturation voltage (Vce Sat) is specified at a maximum of 550mV at 300mA and 3A. The package type is SOT-223 (TO-261-4, TO-261AA) supplied in tape and reel. This device is commonly utilized in industrial automation and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 720 mW |
| Frequency - Transition | 110 MHz |
| Resistor - Base (R1) | 10 kOhms |
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