MUN5236T1
TRANS PREBIAS NPN 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN5236T1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It is packaged in an SC-70-3 (SOT323) format, supplied on tape and reel. The internal bias network includes a 100 kOhm base resistor (R1) and a 100 kOhm emitter base resistor (R2), simplifying circuit design by eliminating the need for external biasing components. Key specifications include a minimum DC current gain (hFE) of 80 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA. The maximum power dissipation is 202mW. This transistor is commonly employed in digital logic level shifting, discrete switching applications, and general purpose amplification within the consumer electronics, industrial automation, and communication systems sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
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