MUN5235T1
TRANS PREBIAS NPN 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN5235T1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 202mW. It is supplied in an SC-70-3 (SOT323) package and is delivered on tape and reel. The internal base resistance (R1) is specified at 2.2 kOhms, and the emitter base resistance (R2) is 47 kOhms, providing a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. This transistor is suitable for use in various industrial and consumer electronics applications requiring simplified circuit design and reduced component count.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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