MUN5231T1G
TRANS PREBIAS NPN 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN5231T1G is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features integrated base resistors (R1 = 2.2 kOhms, R2 = 2.2 kOhms), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor has a maximum power dissipation of 202 mW and a Vce saturation of 250 mV at 5 mA base current and 10 mA collector current. With a minimum DC current gain (hFE) of 8 at 5 mA collector current and 10 V collector-emitter voltage, and a collector cutoff current of 500 nA, it is suitable for general-purpose switching and amplification tasks. The MUN5231T1G is supplied in a compact SC-70-3 (SOT323) package, available on tape and reel. This device finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Qualification | - |
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