MUN5136T1
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN5136T1 is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and can handle a maximum collector current of 100mA, with a maximum power dissipation of 202mW. It is supplied in an SC-70-3 (SOT323) surface mount package, presented on tape and reel. The device incorporates internal base resistors, specified as R1 at 100 kOhms and R2 at 100 kOhms, simplifying circuit design by eliminating the need for external biasing components. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, and a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. The maximum collector cutoff current is rated at 500nA. This transistor is suitable for use in various industrial and consumer electronics applications requiring simplified switching and amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
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