MUN5135T1
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN5135T1 is a PNP bipolar junction transistor featuring integrated base resistors for simplified circuit design. This pre-biased transistor operates with a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The device has a maximum power dissipation of 202mW and a saturation voltage (Vce(sat)) of 250mV at 300µA base current and 10mA collector current. Internal resistors include R1 at 2.2 kOhms and R2 at 47 kOhms. The MUN5135T1 is supplied in a SC-70-3 (SOT323) surface-mount package, delivered on tape and reel. This component is commonly utilized in industrial, automotive, and consumer electronics applications for switching and amplification functions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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