MUN5115T1
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN5115T1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistor (R1) is 10 kOhms, providing a 202mW power dissipation capability within its SC-70-3 (SOT323) package. Minimum DC current gain (hFE) is specified at 160 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250mV at 1mA base current and 10mA collector current. This device is commonly utilized in industrial automation, consumer electronics, and communication systems for switching and amplification functions. The MUN5115T1 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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