MUN5113T3G
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN5113T3G, a PNP - Pre-Biased Bipolar Transistor, offers a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. This surface mount device, packaged in an SC-70-3 (SOT323), features integrated base resistors (R1: 47 kOhms, R2: 47 kOhms) simplifying circuit design and reducing component count. With a maximum power dissipation of 202mW, it exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The MUN5113T3G is commonly utilized in consumer electronics and industrial automation applications requiring simplified switching and logic functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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