MUN5113T1
TRANS PREBIAS PNP 50V SC70-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN5113T1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting in an SC-70-3 (SOT323) package. This component features integrated base resistors (R1 = 47 kOhms, R2 = 47 kOhms) simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation capability of 202mW. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 300µA base current and 10mA collector current. The MUN5113T1 is suitable for applications in automotive, industrial, and consumer electronics requiring simplified logic input circuitry or signal level shifting. Supplied on tape and reel for automated manufacturing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-70-3 (SOT323) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 202 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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