MUN2240T1
TRANS BRT NPN 100MA 50V SC-59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2240T1 is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a typical DC current gain (hFE) of 120 at 5 mA collector current and 10 V collector-emitter voltage. The transistor has a power dissipation rating of 338 mW and a saturation voltage (Vce(sat)) of 250 mV at 1 mA base current and 10 mA collector current. A fixed base resistor of 47 kOhms is integrated for simplified circuit design. The MUN2240T1 is housed in a compact SC-59 (TO-236-3) package, making it suitable for space-constrained designs in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 47 kOhms |
| Qualification | - |
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