MUN2236T1G
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
onsemi MUN2236T1G is an NPN pre-biased bipolar transistor in an SC-59 package. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 at 100 kOhms and R2 at 100 kOhms, simplify circuit design by providing a fixed bias point. With a maximum power dissipation of 338 mW and a Vce(sat) of 250mV at 300µA/10mA, this transistor is suitable for various switching and amplification applications. The SC-59 package, also known as TO-236-3 or SOT-23-3, is ideal for surface mounting in compact electronic assemblies. The MUN2236T1G is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
Request a Quote
Clients Also Buy
MMUN2111LT1
TRANS BRT PNP 100MA 50V SOT23
FJY3006R
TRANS PREBIAS NPN 50V SC89-3
MUN2214T1
TRANS BRT NPN 100MA 50V SC59
