MUN2236T1
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2236T1 is an NPN pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. This device incorporates internal base resistors (R1: 100 kOhms, R2: 100 kOhms) for simplified circuit design, eliminating the need for external bias components. The MUN2236T1 offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current. With a maximum power dissipation of 338mW, it is housed in a compact SC-59 (TO-236-3, SOT-23-3) surface-mount package, supplied on tape and reel. This component is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Qualification | - |
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