MUN2230T1G
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2230T1G is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50 V and a maximum Collector Current (Ic) of 100 mA. It is supplied in a compact SC-59 (TO-236-3) package, delivered on tape and reel for automated assembly. The internal biasing network includes a base resistor (R1) of 1 kOhm and an emitter-base resistor (R2) of 1 kOhm, providing a minimum DC current gain (hFE) of 3 at 5 mA collector current and 10 V collector-emitter voltage. With a maximum power dissipation of 338 mW, this transistor is suitable for use in various industrial and consumer electronics applications requiring simplified circuit configurations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Qualification | - |
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