MUN2214T1
TRANS BRT NPN 100MA 50V SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN2214T1 is an NPN pre-biased bipolar junction transistor designed for surface mounting. This component offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features integrated base resistors, R1 at 10 kOhms and R2 at 47 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. Power dissipation is rated at 338 mW, with a saturation voltage (Vce) of 250 mV at 300 µA base current and 10 mA collector current. The SC-59 package (TO-236-3, SOT-23-3) is supplied in Cut Tape. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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