MUN2213JT1G
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2213JT1G is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage of 50V and a maximum Collector Current of 100mA. It boasts a typical DC Current Gain (hFE) of 80 at 5mA and 10V, with a Collector-Emitter Saturation Voltage of 250mV at 300µA collector current and 10mA base current. The integrated base resistors, R1 and R2, are specified at 47 kOhms each, simplifying circuit design. This device is packaged in an SC-59 (TO-236-3, SOT-23-3) and supplied on tape and reel. It is suitable for use in various consumer electronics and industrial control applications requiring simplified switching or logic functions. The maximum power dissipation is rated at 338 mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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