MUN2213JT1
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2213JT1 is an NPN pre-biased bipolar transistor designed for surface mount applications within a SC-59 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 and R2, are both specified at 47 kOhms, providing a simplified biasing solution. With a power dissipation rating of 338mW, it is suitable for low-power switching and amplification circuits. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, with a Vce saturation of 250mV at 300µA base current and 10mA collector current. This device finds application in various electronic systems, including consumer electronics and industrial controls.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 338 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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