MUN2211JT1G
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN2211JT1G is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V with a maximum collector current of 100mA. The internal base resistor (R1) is rated at 10 kOhms and the emitter base resistor (R2) is also 10 kOhms, providing a typical DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. Saturation voltage (Vce) is specified at a maximum of 250mV for a collector current of 10mA and base current of 300µA. Power dissipation is limited to 230mW. The component is supplied in an SC-59 surface mount package, suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | - |
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