MUN2141T1G
TRANS PREBIAS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN2141T1G is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is 100 kOhms, facilitating simplified circuit design by eliminating the need for external biasing components. With a power dissipation of 230mW and a Vce(sat) of 250mV at 300µA base and 10mA collector current, this transistor offers efficient operation. The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V Vce. Packaged in an SC-59 (TO-236-3, SOT-23-3) format and supplied on tape and reel, the MUN2141T1G is suitable for use in consumer electronics and industrial control systems where space and design simplicity are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 100 kOhms |
| Qualification | - |
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