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MUN2137T1

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MUN2137T1

TRANS PREBIAS PNP 50V 0.1A SC59

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi MUN2137T1 is a PNP pre-biased bipolar junction transistor. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. This device offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current. The internal base resistors are R1 at 47 kOhms and R2 at 22 kOhms. Rated for a maximum power dissipation of 230mW, the MUN2137T1 is supplied in an SC-59 (TO-236-3, SOT-23-3) surface mount package and delivered on tape and reel. This component is commonly utilized in digital logic circuits and switching applications across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Supplier Device PackageSC-59
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max230 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
Qualification-

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