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MUN2136T1

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MUN2136T1

TRANS PREBIAS PNP 50V 0.1A SC59

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi MUN2136T1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 230mW. It is supplied in a compact SC-59 (TO-236-3) package, suitable for high-density circuit designs. The integrated base resistor (R1) is 100 kOhms and the emitter-base resistor (R2) is 100 kOhms, facilitating simplified circuit construction. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The collector cutoff current (Ic) is rated at a maximum of 500nA. This device finds application in various industrial and consumer electronics where simplified biasing and space efficiency are critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Supplier Device PackageSC-59
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max230 mW
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
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