MUN2132T1
TRANS PREBIAS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN2132T1 is a PNP bipolar junction transistor featuring integrated base resistors for simplified circuit design. This pre-biased transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The internal base-emitter resistor network, with typical values of 4.7 kOhms for both R1 and R2, facilitates direct drive from logic-level signals. Rated for a maximum power dissipation of 230mW, it is supplied in a compact SC-59 (TO-236-3) surface-mount package. Applications include switching circuits, logic level translation, and general-purpose amplification in industrial and consumer electronics. The device exhibits a Vce(sat) of 250mV at 1mA base and 10mA collector current, with a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V Vce. It is available on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Qualification | - |
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