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MUN2130T1

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MUN2130T1

TRANS PREBIAS PNP 50V 0.1A SC59

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi MUN2130T1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a power dissipation of 230 mW. The internal bias resistors are specified as R1 = 1 k Ohm and R2 = 1 k Ohm, providing a minimum DC current gain (hFE) of 3 at 5 mA collector current and 10 V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250 mV at 300 µA base current and 10 mA collector current. The transistor is housed in an SC-59 package (TO-236-3, SOT-23-3). Typical applications include switching and amplification circuits in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Supplier Device PackageSC-59
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max230 mW
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
Qualification-

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