MUN2130T1
TRANS PREBIAS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2130T1 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a power dissipation of 230 mW. The internal bias resistors are specified as R1 = 1 k Ohm and R2 = 1 k Ohm, providing a minimum DC current gain (hFE) of 3 at 5 mA collector current and 10 V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250 mV at 300 µA base current and 10 mA collector current. The transistor is housed in an SC-59 package (TO-236-3, SOT-23-3). Typical applications include switching and amplification circuits in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Qualification | - |
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