MUN2112T1
TRANS BRT PNP 100MA 50V SC-59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MUN2112T1 is a PNP pre-biased bipolar transistor. This component features a collector current rating of 100 mA and a collector-emitter breakdown voltage of 50 V. It offers a maximum power dissipation of 230 mW in a surface-mount SC-59 package (TO-236-3, SOT-23-3). The integrated base resistor (R1) is 22 kOhms, and the emitter-base resistor (R2) is 22 kOhms, enabling simplified circuit design by eliminating the need for external biasing resistors. The DC current gain (hFE) is a minimum of 60 at 5 mA collector current and 10 V Vce. Saturation voltage (Vce) is a maximum of 250 mV at 300 µA base current and 10 mA collector current. The collector cutoff current is 500 nA maximum. This transistor is commonly employed in industrial, consumer electronics, and automotive applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Qualification | - |