MUN2111T3
TRANS PREBIAS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MUN2111T3 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a Collector-Emitter Breakdown Voltage (Vce) of 50V and a maximum Collector Current (Ic) of 100mA. The device integrates base resistors (R1 = 10 kOhms, R2 = 10 kOhms), simplifying circuit design by eliminating the need for external biasing components. It offers a minimum DC Current Gain (hFE) of 35 at 5mA collector current and 10V collector-emitter voltage. The maximum power dissipation is 230mW. The transistor is supplied in a compact SC-59 (TO-236-3, SOT-23-3) package, delivered on tape and reel. This device is commonly utilized in consumer electronics, industrial control systems, and communication infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SC-59 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 230 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | - |
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