MMUN2237LT1G
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
The onsemi MMUN2237LT1G is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 246mW. The internal base resistor (R1) is specified at 47 kOhms and the emitter base resistor (R2) at 22 kOhms, providing a quiescent operating point. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250mV at 5mA base current and 10mA collector current. The device is supplied in a SOT-23-3 (TO-236) package, commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Qualification | - |
Request a Quote
Clients Also Buy
MMUN2234LT1
TRANS BRT PNP 50V SOT-23
DTA144TT1
TRANS PREBIAS PNP 50V 0.1A SC59
NSBC124XF3T5G
TRANS PREBIAS NPN 50V SOT1123
