MMUN2231LT1

TRANS PREBIAS NPN 50V SOT23-3

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

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onsemi MMUN2231LT1 is an NPN pre-biased bipolar transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 246mW. The integrated base resistor (R1) is 2.2 kOhms and the emitter base resistor (R2) is 2.2 kOhms, providing a minimum DC current gain (hFE) of 8 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 250mV at 5mA base current and 10mA collector current. The component is supplied in a SOT-23-3 (TO-236) package, tape and reel. This transistor is commonly utilized in various industrial and consumer electronics applications requiring simplified biasing and circuit design.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5mA, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Grade	-
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Power - Max	246 mW
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
Qualification	-