MMUN2215LT1
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MMUN2215LT1 is an NPN pre-biased bipolar junction transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a maximum power dissipation of 246 mW, it is supplied in a SOT-23-3 surface mount package. The transistor incorporates an internal base resistor of 10 kOhms, simplifying circuit design and reducing component count. Key parameters include a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce, and a saturation voltage (Vce(sat)) of 250mV at 1mA base current and 10mA collector current. The cutoff current (Ic(max)) is specified at 500 nA. This component is commonly utilized in consumer electronics, industrial control systems, and communication equipment. It is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 10 kOhms |
| Qualification | - |
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