MMUN2212LT1
TRANS PREBIAS NPN 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi MMUN2212LT1 is an NPN pre-biased bipolar transistor. This device features integrated base resistors, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV for 300µA base current and 10mA collector current. With a maximum power dissipation of 246mW, it is supplied in a SOT-23-3 surface-mount package, ideal for compact applications. Internal base resistors of 22 kOhms (R1) and 22 kOhms (R2) are integrated for ease of use. This component is commonly utilized in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Qualification | - |
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