MMUN2211LT1
TRANS BRT NPN 100MA 50V SOT23Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MMUN2211LT1 is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 246mW. This device incorporates internal base resistors (R1 = 10 kOhms, R2 = 10 kOhms) simplifying circuit design. Key specifications include a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, and a saturation voltage (Vce(sat)) of 250mV at 300µA base current and 10mA collector current. The MMUN2211LT1 is housed in a SOT-23-3 (TO-236) package and is supplied on cut tape. This component finds application in various industrial and consumer electronics, including control circuits and signal amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | - |
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