MMUN2134LT1
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MMUN2134LT1 is a PNP – Pre-Biased Bipolar Junction Transistor designed for surface mounting within a SOT-23-3 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It incorporates integrated base resistors, R1 at 22 kOhms and R2 at 47 kOhms, simplifying circuit design and reducing component count. The transistor offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 246 mW, the MMUN2134LT1 is suitable for applications in consumer electronics and industrial control systems requiring straightforward switching or amplification. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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