MMUN2113LT3
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MMUN2113LT3 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is 47 kOhms, and the emitter base resistor (R2) is also 47 kOhms, providing a fixed bias condition. With a maximum power dissipation of 246 mW, it is housed in a compact SOT-23-3 (TO-236) package, supplied on tape and reel. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Typical saturation voltage (Vce Sat) is 250mV at 300µA base current and 10mA collector current, with a collector cutoff current (Ic) of 500nA. This transistor finds application in various electronic circuits, including switching and amplification stages within consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Qualification | - |
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