MMUN2112LT1
TRANS PREBIAS PNP 50V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi MMUN2112LT1 is a PNP pre-biased bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is housed in a compact SOT-23-3 (TO-236) package, suitable for high-density circuit designs. The integrated base resistor (R1) is specified at 22 kOhms, and the emitter-base resistor (R2) is also 22 kOhms, facilitating simplified biasing. With a maximum power dissipation of 246mW, this transistor offers a DC current gain (hFE) of at least 60 at 5mA collector current and 10V Vce. The MMUN2112LT1 finds application in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 246 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Qualification | - |
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