FJY4001R
TRANS PREBIAS PNP 50V SC89-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJY4001R, a PNP pre-biased bipolar junction transistor, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. This device features integrated base resistors (R1 = 4.7 kOhms, R2 = 4.7 kOhms), simplifying circuit design for applications requiring a fixed bias. With a transition frequency of 200 MHz and a maximum power dissipation of 200mW, it is suitable for general-purpose switching and amplification in consumer electronics and industrial automation. The FJY4001R is supplied in an SC-89-3 surface mount package, compatible with Tape & Reel (TR) packaging for automated assembly. Key electrical parameters include a minimum DC current gain (hFE) of 20 at 10mA/5V and a Vce saturation of 300mV at 500µA/10mA. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
| Supplier Device Package | SC-89-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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