FJY3013R
TRANS PREBIAS NPN 50V SC89-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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FJY3013R from onsemi is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, it is suitable for applications requiring efficient switching and amplification. The internal base resistor (R1) is 2.2 kOhms, and the emitter base resistor (R2) is 47 kOhms, providing integrated biasing. The transistor type is NPN - Pre-Biased, with a DC current gain (hFE) of a minimum of 56 at 5mA, 5V. The collector cutoff current (ICBO) is a maximum of 100nA. This device is packaged in an SC-89-3 (SOT-490) and supplied on tape and reel. It finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Supplier Device Package | SC-89-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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