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FJY3006R

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FJY3006R

TRANS PREBIAS NPN 50V SC89-3

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi FJY3006R is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a breakdown voltage (Vce) of 50 V and a maximum collector current (Ic) of 100 mA. The transistor exhibits a transition frequency (Ft) of 250 MHz and a maximum power dissipation of 200 mW. It integrates base resistors R1 (10 kOhms) and emitter base resistor R2 (47 kOhms), providing a minimum DC current gain (hFE) of 68 at 5 mA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 10 mA collector current, with a collector cutoff current (Icbo) of 100 nA. Packaged in an SC-89-3 (SC-89, SOT-490) and supplied on tape and reel, this device is commonly utilized in industrial and consumer electronics for switching and amplification functions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Supplier Device PackageSC-89-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms

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