FJX4005RTF
TRANS PREBIAS PNP 50V SOT323Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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The onsemi FJX4005RTF is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It operates with a transition frequency of 200 MHz and a maximum power dissipation of 200 mW. The internal base resistor (R1) is 4.7 kOhms, and the emitter base resistor (R2) is 10 kOhms, providing a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce) is specified at a maximum of 300 mV at 500 µA base current and 10 mA collector current. The device is supplied in a SOT-323 package, delivered on tape and reel. This transistor finds utility in various electronic circuits, including switching and amplification applications across consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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