FJX3015RTF
TRANS PREBIAS NPN 50V SOT323Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJX3015RTF is an NPN pre-biased bipolar transistor designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 (2.2 kOhms) and R2 (10 kOhms), simplify circuit design by eliminating the need for external biasing components. With a transition frequency of 250 MHz and a maximum power dissipation of 200 mW, the FJX3015RTF is suitable for general-purpose switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 33 at 10 mA and 5 V, with a Vce saturation of 300 mV at 500 µA and 10 mA. It is supplied in a SOT-323 package, commonly found in consumer electronics, industrial control, and telecommunications equipment. The component is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 10mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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