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Single, Pre-Biased Bipolar Transistors

FJX3012RTF

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FJX3012RTF

TRANS PREBIAS NPN 40V SOT323

Manufacturer: onsemi

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

The onsemi FJX3012RTF is an NPN pre-biased bipolar transistor designed for surface mount applications within a SOT-323 package. This component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 100mA. It features a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. The integrated base resistor (R1) is 47 kOhms, facilitating simplified circuit design. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1mA and 5V, and a saturation voltage (Vce Sat) of 300mV at 1mA and 10mA. The device exhibits a collector cutoff current (ICBO) of 100nA. This transistor finds application in various electronic systems, including consumer electronics and industrial control. The FJX3012RTF is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Supplier Device PackageSOT-323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max200 mW
Frequency - Transition250 MHz
Resistor - Base (R1)47 kOhms

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