FJX3004RTF
TRANS PREBIAS NPN 50V SOT323Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJX3004RTF is an NPN pre-biased bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 200mW, it is suitable for general-purpose amplification and switching tasks. The internal base resistors are R1 = 47 kOhms and R2 = 47 kOhms, simplifying circuit design by eliminating external biasing components. The device exhibits a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage, with a saturation voltage (Vce Sat) of 300mV at 500µA base current and 10mA collector current. The FJX3004RTF is supplied in a SOT-323 package, commonly used in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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