FJV4110RMTF
TRANS PREBIAS PNP 40V SOT23-3Manufacturer: onsemi
Categories: Single, Pre-Biased Bipolar Transistors
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onsemi FJV4110RMTF is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mounting within a SOT-23-3 package. This component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 100mA. It features a transition frequency of 200MHz and a power dissipation rating of 200mW. The integrated base resistor (R1) is 10 kOhms, and the device exhibits a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce) is specified at a maximum of 300mV at 1mA base current and 10mA collector current. The FJV4110RMTF is supplied on tape and reel, suitable for high-volume manufacturing in applications such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
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